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Abstract Topological solitons are exciting candidates for the physical implementation of next-generation computing systems. As these solitons are nanoscale and can be controlled with minimal energy consumption, they are ideal to fulfill emerging needs for computing in the era of big data processing and storage. Magnetic domain walls (DWs) and magnetic skyrmions are two types of topological solitons that are particularly exciting for next-generation computing systems in light of their non-volatility, scalability, rich physical interactions, and ability to exhibit non-linear behaviors. Here we summarize the development of computing systems based on magnetic topological solitons, highlighting logical and neuromorphic computing with magnetic DWs and skyrmions. 

Spintronic devices, especially those based on motion of a domain wall (DW) through a ferromagnetic track, have received a significant amount of interest in the field of neuromorphic computing because of their non-volatility and intrinsic current integration capabilities. Many spintronic neurons using this technology have already been proposed, but they also require external circuitry or additional device layers to implement other important neuronal behaviors. Therefore, they result in an increase in fabrication complexity and/or energy consumption. In this work, we discuss three neurons that implement these functions without the use of additional circuitry or material layers. 

Due to their non-volatility and intrinsic current integration capabilities, spintronic devices that rely on domain wall (DW) motion through a free ferromagnetic track have garnered significant interest in the field of neuromorphic computing. Although a number of such devices have already been proposed, they require the use of external circuitry to implement several important neuronal behaviors. As such, they are likely to result in either a decrease in energy efficiency, an increase in fabrication complexity, or even both. To resolve this issue, we have proposed three individual neurons that are capable of performing these functionalities without the use of any external circuitry. To implement leaking, the first neuron uses a dipolar coupling field, the second uses an anisotropy gradient, and the third uses shape variations of the DW track. 

The challenge of developing an efficient artificial neuron is impeded by the use of external CMOS circuits to perform leaking and lateral inhibition. The proposed leaky integrate-and-fire neuron based on the three terminal magnetic tunnel junction (3T-MTJ) performs integration by pushing its domain wall (DW) with spin-transfer or spin-orbit torque. The leaking capability is achieved by pushing the neurons’ DWs in the direction opposite of integration using a stray field from a hard ferromagnet or a non-uniform energy landscape resulting from shape or anisotropy variation. Firing is performed by the MTJ stack. Finally, analog lateral inhibition is achieved by dipolar field repulsive coupling from each neuron. An integrating neuron thus pushes slower neighboring neurons’ DWs in the direction opposite of integration. Applying this lateral inhibition to a ten-neuron output layer within a neuromorphic crossbar structure enables the identification of handwritten digits with 94% accuracy.